Abstract. In the article the improved technology of manufacturing of surface-barrier detectors (SBD) on silicon of n-type conductivity, adapted for manufacturing of SBDs used in radon radiometers, is proposed. The detectors have light protection, stable characteristics under the accepted operating conditions, optimally meeting the requirements for operation in the device. The technology makes it possible to provide a high yield of year-old counters, which reduces their cost price. The possibility of manufacturing PBDs on thin silicon wafers rejected for further use in planar technology is shown.
surface barrier detectors (SBD), silicon, edge effect, rectifying contact, currentvoltage characteristics (CVC), alpha spectrometry, light protection, pyridine, Shockley-Ramo theorem.
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